The rapid advancements in reconfigurable electronics are set to drive the future of electronic device technologies, with the latest breakthrough reported by researchers at Yonsei University, Korea. The team, led by Professor Joohoon Kang, has introduced an innovative approach for fabricating reconfigurable electronic devices based on vertical van der Waals heterostructures, leveraging solution-processed two-dimensional materials.

 The research focuses on the innovative use of sub-stoichiometric zirconium oxide (ZrO2-x) as a dielectric layer and molybdenum disulfide (MoS2) as a semiconductor, which together form a scalable platform for creating large-area and high-performance devices. This breakthrough technology enables simultaneous global and local gating within a single-gate transistor configuration, facilitating dynamic switching between various electronic functions such as field-effect transistors and diodes with just a single applied gate bias.

 One of the most exciting aspects of this development is its application in reconfigurable optoelectronics. By utilizing the unique capabilities of the ZrO2-x/MoS2 heterostructure, the team has demonstrated adjustable temporal photoresponse dynamics, with exceptional photoresponsivity and a wide range of photo-detection capabilities. These advancements have the potential to revolutionize applications in image sensors and in-sensor computing, offering high-performance optoelectronics for a wide range of technologies.

 Professor Kang emphasizes, "This research demonstrates the feasibility of producing large-area reconfigurable electronics with exceptional stability and performance, paving the way for next-generation electronic and optoelectronic devices."

Schematic illustrations of the reconfigurable electronic device operations in two distinct modes, along with their electrical and optoelectrical characteristics.

[Reference] Kim K. et al., “Sub-stoichiometric zirconium oxide as a solution-processed dielectric for reconfigurable electronics” Nature Electronics (2025), doi/10.1038/s41928-025-01379-1

[Main Author] Kangsan Kim (Sungkyunkwan University), Jihyun Kim (Yonsei University), Joohoon Kang (Yonsei University)

* Contact : Professor Joohoon Kang (joohoon@yonsei.ac.kr)